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SEMI G86 — Test Method for Measurement of Chip (Die) Strength by Mean of 3 Point Bending
適用於本指引的溫室氣體(GHG)為CF4，C2F6，C3F8，c-C4F8，CHF3，SF6與NF3。
SEMI E111-1213 (technical revision)
SEMI E134-1105 (technical revision)
Charged wafer and reticle surfaces attract airborne particles (electrostatic attraction [ESA]) and increase the defect rate
F09900 - SEMI F99 - Dimensional Specification of a Diaphragm Valve for a Metric PFA Tube StdVol-3D-IC SEMI G86 — Test MethodThis specification was technically approved by the Global Liquid Chemicals Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on March 11, 2005. It was available at www. semi. org in June 2005. NOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and continue to